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1. general description the 74aup1g09 provides the single 2-input and gate with an open-drain output. the output of the device is an open-drain and can be connected to other open-drain outputs to implement active-low wired-or or active-high wired-and functions. schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire v cc range from 0.8 v to 3.6 v. this device ensures a very low static and dynamic power consumption across the entire v cc range from 0.8 v to 3.6 v. this device is fully speci?ed for partial power-down applications using i off . the i off circuitry disables the output, preventing the damaging back?ow current through the device when it is powered down. 2. features n wide supply voltage range from 0.8 v to 3.6 v n high noise immunity n complies with jedec standards: u jesd8-12 (0.8 v to 1.3 v) u jesd8-11 (0.9 v to 1.65 v) u jesd8-7 (1.2 v to 1.95 v) u jesd8-5 (1.8 v to 2.7 v) u jesd8-b (2.7 v to 3.6 v) n esd protection: u hbm jesd22-a114e exceeds 5000 v u mm jesd22-a115-a exceeds 200 v u cdm jesd22-c101c exceeds 1000 v n low static power consumption; i cc = 0.9 m a (maximum) n latch-up performance exceeds 100 ma per jesd 78 class ii n inputs accept voltages up to 3.6 v n low noise overshoot and undershoot < 10 % of v cc n i off circuitry provides partial power-down mode operation n multiple package options n speci?ed from - 40 cto+85 c and - 40 c to +125 c 74aup1g09 low-power 2-input and gate with open-drain rev. 01 15 january 2009 product data sheet
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 2 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 3. ordering information 4. marking 5. functional diagram table 1. ordering information type number package temperature range name description version 74AUP1G09GW - 40 c to +125 c tssop5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 74aup1g09gm - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 74aup1g09gf - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1 0.5 mm sot891 table 2. marking type number marking code 74AUP1G09GW p9 74aup1g09gm p9 74aup1g09gf p9 fig 1. logic symbol fig 2. iec logic symbol fig 3. logic diagram 001aad598 1 b y a 2 4 001aad599 1 4 & 2 001aad600 y gnd b a
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 3 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 6. pinning information 6.1 pinning 6.2 pin description 7. functional description [1] h = high voltage level; l = low voltage level; z = high-impedance off state. fig 4. pin con?guration sot353-1 (tssop5) fig 5. pin con?guration sot886 (xson6) fig 6. pin con?guration sot891 (xson6) 74aup1g09 bv cc a gnd y 001aai728 1 2 3 5 4 74aup1g09 a 001aai729 b gnd n.c. v cc y transparent top view 2 3 1 5 4 6 74aup1g09 a 001aai730 b gnd n.c. v cc y transparent top view 2 3 1 5 4 6 table 3. pin description symbol pin description tssop5 xson6 b 1 1 data input a 2 2 data input gnd 3 3 ground (0 v) y 4 4 data output n.c. - 5 not connected v cc 5 6 supply voltage table 4. function table [1] input output a b y lll lhl hl l hhz
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 4 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 8. limiting values [1] the minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] for tssop5 packages: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. for xson6 packages: above 45 c the value of p tot derates linearly with 2.4 mw/k. 9. recommended operating conditions 10. static characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +4.6 v i ik input clamping current v i <0v - 50 - ma v i input voltage [1] - 0.5 +4.6 v i ok output clamping current v o <0v - - 50 ma v o output voltage active mode and power-down mode [1] - 0.5 +4.6 v i o output current v o =0 vtov cc - +20 ma i cc supply current - +50 ma i gnd ground current - 50 - ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [2] - 250 mw table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 0.8 3.6 v v i input voltage 0 3.6 v v o output voltage active mode and power-down mode 0 3.6 v t amb ambient temperature - 40 +125 c d t/ d v input transition rise and fall rate v cc = 0.8 v to 3.6 v 0 200 ns/v table 7. static characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit t amb = 25 c v ih high-level input voltage v cc = 0.8 v 0.7v cc --v v cc = 0.9 v to 1.95 v 0.65v cc --v v cc = 2.3 v to 2.7 v 1.6 - - v v cc = 3.0 v to 3.6 v 2.0 - - v v il low-level input voltage v cc = 0.8 v - - 0.3v cc v v cc = 0.9 v to 1.95 v - - 0.35v cc v v cc = 2.3 v to 2.7 v - - 0.7 v v cc = 3.0 v to 3.6 v - - 0.9 v
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 5 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc = 1.1 v - - 0.3v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.31 v i o = 1.9 ma; v cc = 1.65 v - - 0.31 v i o = 2.3 ma; v cc = 2.3 v - - 0.31 v i o = 3.1 ma; v cc = 2.3 v - - 0.44 v i o = 2.7 ma; v cc = 3.0 v - - 0.31 v i o = 4.0 ma; v cc = 3.0 v - - 0.44 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.1 m a i oz off-state output current v i = v ih or v il ; v o = 0 v to 3.6 v; v cc = 3.6 v -- 0.1 m a i off power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v - - 0.2 m a d i off additional power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v to 0.2 v -- 0.2 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 0.5 m a d i cc additional supply current v i = v cc - 0.6 v; i o = 0 a; v cc = 3.3 v - - 40 m a c i input capacitance v cc = 0 v to 3.6 v; v i = gnd or v cc - 0.8 - pf c o output capacitance output enabled; v o = gnd; v cc = 0 v - 1.7 - pf output disabled; v o = gnd; v cc = 0 v - 1.1 - pf t amb = - 40 c to +85 c v ih high-level input voltage v cc = 0.8 v 0.7v cc --v v cc = 0.9 v to 1.95 v 0.65v cc --v v cc = 2.3 v to 2.7 v 1.6 - - v v cc = 3.0 v to 3.6 v 2.0 - - v v il low-level input voltage v cc = 0.8 v - - 0.3v cc v v cc = 0.9 v to 1.95 v - - 0.35v cc v v cc = 2.3 v to 2.7 v - - 0.7 v v cc = 3.0 v to 3.6 v - - 0.9 v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc = 1.1 v - - 0.3v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.37 v i o = 1.9 ma; v cc = 1.65 v - - 0.35 v i o = 2.3 ma; v cc = 2.3 v - - 0.33 v i o = 3.1 ma; v cc = 2.3 v - - 0.45 v i o = 2.7 ma; v cc = 3.0 v - - 0.33 v i o = 4.0 ma; v cc = 3.0 v - - 0.45 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.5 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 6 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain i oz off-state output current v i = v ih or v il ; v o = 0 v to 3.6 v; v cc = 3.6 v -- 0.5 m a i off power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v - - 0.5 m a d i off additional power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v to 0.2 v -- 0.6 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 0.9 m a d i cc additional supply current v i = v cc - 0.6 v; i o = 0 a; v cc = 3.3 v - - 50 m a t amb = - 40 c to +125 c v ih high-level input voltage v cc = 0.8 v 0.75v cc --v v cc = 0.9 v to 1.95 v 0.7v cc --v v cc = 2.3 v to 2.7 v 1.6 - - v v cc = 3.0 v to 3.6 v 2.0 - - v v il low-level input voltage v cc = 0.8 v - - 0.25v cc v v cc = 0.9 v to 1.95 v - - 0.3v cc v v cc = 2.3 v to 2.7 v - - 0.7 v v cc = 3.0 v to 3.6 v - - 0.9 v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 0.8 v to 3.6 v - - 0.11 v i o = 1.1 ma; v cc = 1.1 v - - 0.33v cc v i o = 1.7 ma; v cc = 1.4 v - - 0.41 v i o = 1.9 ma; v cc = 1.65 v - - 0.39 v i o = 2.3 ma; v cc = 2.3 v - - 0.36 v i o = 3.1 ma; v cc = 2.3 v - - 0.50 v i o = 2.7 ma; v cc = 3.0 v - - 0.36 v i o = 4.0 ma; v cc = 3.0 v - - 0.50 v i i input leakage current v i = gnd to 3.6 v; v cc = 0 v to 3.6 v - - 0.75 m a i oz off-state output current v i = v ih or v il ; v o = 0 v to 3.6 v; v cc = 3.6 v -- 0.75 m a i off power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v - - 0.75 m a d i off additional power-off leakage current v i or v o = 0 v to 3.6 v; v cc = 0 v to 0.2 v -- 0.75 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 0.8 v to 3.6 v - - 1.4 m a d i cc additional supply current v i = v cc - 0.6 v; i o = 0 a; v cc = 3.3 v - - 75 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 7 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 11. dynamic characteristics table 8. dynamic characteristics voltages are referenced to gnd (groun d=0v; for test circuit see figure 8 symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) c l = 5 pf t pd propagation delay a or b to y; see figure 7 [2] v cc = 0.8 v - 13.5 - - - - ns v cc = 1.1 v to 1.3 v 1.9 4.6 10.4 1.8 11.4 12.6 ns v cc = 1.4 v to 1.6 v 1.5 3.3 6.5 1.4 7.4 8.2 ns v cc = 1.65 v to 1.95 v 1.2 2.9 5.1 1.1 5.9 6.5 ns v cc = 2.3 v to 2.7 v 1.0 2.2 3.8 0.9 4.5 4.9 ns v cc = 3.0 v to 3.6 v 0.9 2.3 4.0 0.8 4.5 4.9 ns c l = 10 pf t pd propagation delay a or b to y; see figure 7 [2] v cc = 0.8 v - 16.3 - - - - ns v cc = 1.1 v to 1.3 v 2.3 5.6 12.3 2.1 13.7 15.1 ns v cc = 1.4 v to 1.6 v 1.8 4.1 7.6 1.7 8.8 9.7 ns v cc = 1.65 v to 1.95 v 1.6 3.8 6.1 1.4 7.1 7.8 ns v cc = 2.3 v to 2.7 v 1.4 2.9 4.6 1.2 5.4 5.9 ns v cc = 3.0 v to 3.6 v 1.3 3.2 5.7 1.1 6.4 7.0 ns c l = 15 pf t pd propagation delay a or b to y; see figure 7 [2] v cc = 0.8 v - 19.0 - - - - ns v cc = 1.1 v to 1.3 v 2.6 6.6 14.2 2.4 15.8 17.4 ns v cc = 1.4 v to 1.6 v 2.1 4.8 8.7 1.9 10.1 11.1 ns v cc = 1.65 v to 1.95 v 1.9 4.6 7.6 1.7 8.5 9.3 ns v cc = 2.3 v to 2.7 v 1.6 3.6 5.6 1.5 6.3 6.9 ns v cc = 3.0 v to 3.6 v 1.6 4.1 7.5 1.4 8.3 9.1 ns c l = 30 pf t pd propagation delay a or b to y; see figure 7 [2] v cc = 0.8 v - 27.0 - - - - ns v cc = 1.1 v to 1.3 v 3.6 9.5 19.5 3.2 21.8 24.0 ns v cc = 1.4 v to 1.6 v 2.9 7.0 11.5 2.6 13.6 15.0 ns v cc = 1.65 v to 1.95 v 2.6 7.0 12.1 2.3 13.3 14.6 ns v cc = 2.3 v to 2.7 v 2.4 5.4 8.9 2.1 9.9 10.9 ns v cc = 3.0 v to 3.6 v 2.3 6.5 12.7 2.1 13.9 15.3 ns
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 8 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain [1] all typical values are measured at nominal v cc . [2] t pd is the same as t pzl and t plz . [3] c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i n where: f i = input frequency in mhz; v cc = supply voltage in v; n = number of inputs switching. 12. waveforms c l = 5 pf, 10 pf, 15 pf and 30 pf c pd power dissipation capacitance f i = 1 mhz; v i = gnd to v cc [3] v cc = 0.8 v - 0.6 - - - - pf v cc = 1.1 v to 1.3 v - 0.7 - - - - pf v cc = 1.4 v to 1.6 v - 0.8 - - - - pf v cc = 1.65 v to 1.95 v - 0.9 - - - - pf v cc = 2.3 v to 2.7 v - 1.1 - - - - pf v cc = 3.0 v to 3.6 v - 1.4 - - - - pf table 8. dynamic characteristics continued voltages are referenced to gnd (groun d=0v; for test circuit see figure 8 symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) measurement points are given in t ab le 9 . v ol is a typical output voltage level that occurs with the output load. fig 7. the data input (a or b) to output (y) propagation delays 001aai731 t pzl t plz gnd v i v cc v ol v m v m v x y output a, b input table 9. measurement points supply voltage input output v cc v m v m v x 0.8 v to 1.6 v 0.5v cc 0.5v cc v ol + 0.1 v 1.65 v to 2.7 v 0.5v cc 0.5v cc v ol + 0.15 v 3.0 v to 3.6 v 0.5v cc 0.5v cc v ol + 0.3 v
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 9 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain [1] for measuring enable and disable times r l = 5 k w . for measuring propagation delays, set-up and hold times, and pulse width, r l = 1 m w . test data is given in t ab le 10 . de?nitions for test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. r t = termination resistance should be equal to the output impedance z o of the pulse generator. v ext = external voltage for measuring switching times. fig 8. test circuit for measuring switching times 001aac521 dut r t v i v o v ext v cc r l 5 k w c l g table 10. test data supply voltage load v ext v cc c l r l [1] t plh , t phl t pzh , t phz t pzl , t plz 0.8 v to 3.6 v 5 pf, 10 pf, 15 pf and 30 pf 5 k w or 1 m w open gnd 2v cc
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 10 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 13. package outline fig 9. package outline sot353-1 (tssop5) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.1 0 1.0 0.8 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 e 1 1.3 2.25 2.0 0.60 0.15 7 0 0.1 0.1 0.3 0.425 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.46 0.21 sot353-1 mo-203 sc-88a 00-09-01 03-02-19 w m b p d z e e 1 0.15 13 5 4 q a a 2 a 1 l p (a 3 ) detail x l h e e c v m a x a y 1.5 3 mm 0 scale tssop5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 1.1
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 11 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain fig 10. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot886 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.5 0.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 12 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain fig 11. package outline sot891 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot891 sot891 05-04-06 07-05-15 xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale dimensions (mm are the original dimensions) unit mm 0.20 0.12 1.05 0.95 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.35 0.55 a max 0.5 0.04 1 6 2 5 3 4 a 6 (1) 4 (1) note 1. can be visible in some manufacturing processes.
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 13 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 14. abbreviations 15. revision history table 11. abbreviations acronym description cdm charged device model cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge hbm human body model mm machine model ttl transistor-transistor logic table 12. revision history document id release date data sheet status change notice supersedes 74aup1g09_1 20090115 product data sheet - -
74aup1g09_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 15 january 2009 14 of 15 nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 16.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 16.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors 74aup1g09 low-power 2-input and gate with open-drain ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 15 january 2009 document identifier: 74aup1g09_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 recommended operating conditions. . . . . . . . 4 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 16.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 16.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17 contact information. . . . . . . . . . . . . . . . . . . . . 14 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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